A team of researchers has proposed a new concept for magnet-based memory devices, which might revolutionize information storage devices owing to their potential for large-scale integration, non-volatility, and high durability.
Spintronic devices, represented by magnetic random access memory , utilize the magnetization direction of ferromagnetic materials to memorize information. Because of their non-volatility and low energy consumption, spintronic devices will likely play a pivotal role in future information storage components.
The research team, which comprised Hidetoshi Masuda, Takeshi Seki, Yoshinori Onose and others from Tohoku University's Institute for Materials Research, and Jun-ichiro Ohe from Toho University, demonstrated that magnetic materials called helical magnets can be utilized for a magnetic memory device, which should resolve the magnetic field problem.
The research team demonstrated that the chirality memory can be written and read out at room temperature. They fabricated epitaxial thin films of a room-temperature helimagnet MnAuand demonstrated the switching of chirality by the electric current pulses under magnetic fields. Furthermore, they fabricated a bilayer device composed of MnAuand Pt and demonstrated that the chirality memory can be read out as a resistance change, even without magnetic fields.
Hidetoshi Masuda, Takeshi Seki, Jun-ichiro Ohe, Yoichi Nii, Hiroto Masuda, Koki Takanashi, Yoshinori Onose.The integration of mechanical memory in the form of springs has for hundreds of years proven to be a key enabling technology for mechanical devices , achieving advanced functionality ...
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